Josephson parametric reflection amplifier with integrated directionality

A directional superconducting parametric amplifier in the GHz frequency range is designed and analyzed, suitable for low-power read-out of microwave kinetic inductance detectors employed in astrophysics and when combined with a nonreciprocal device at its input also for circuit quantum electrodynamics (cQED). It consists of an one wavelength long nondegenerate Josephson parametric reflection amplifier circuit. The device has two Josephson junction oscillators, connected via a tailored impedance to an on-chip passive circuit which directs the in- to the output port. The amplifier provides a gain of 20 dB over a bandwidth of 220 MHz on the signal as well as on the idler portion of the amplified input and the total photon shot noise referred to the input corresponds to maximally 1.3 photons per second per Hertz of bandwidth. We predict a factor of four increase in dynamic range compared to conventional Josephson parametric amplifiers.Comment: Main article (5 pages plus 2 pages references) plus supplemental material (14 pages

Engineering physics of superconducting hot-electron bolometer mixers

Superconducting hot-electron bolometers are presently the best performing mixing devices for the frequency range beyond 1.2 THz, where good quality superconductor-insulator-superconductor (SIS) devices do not exist. Their physical appearance is very simple: an antenna consisting of a normal metal, sometimes a normal metal-superconductor bilayer, connected to a thin film of a narrow, short superconductor with a high resistivity in the normal state. The device is brought into an optimal operating regime by applying a dc current and a certain amount of local- oscillator power. Despite this technological simplicity its operation has been found to be controlled by many different aspects of superconductivity, all occurring simultaneously. A core ingredient is the understanding that there are two sources of resistance in a superconductor: a charge conversion resistance occurring at an normal-metal-superconductor interface and a resistance due to time- dependent changes of the superconducting phase. The latter is responsible for the actual mixing process in a non-uniform superconducting environment set up by the bias-conditions and the geometry. The present understanding indicates that further improvement needs to be found in the use of other materials with a faster energy-relaxation rate. Meanwhile several empirical parameters have become physically meaningful indicators of the devices, which will facilitate the technological developments.Comment: This is an author-processed copy of an Invited contribution to the Special Issue of the IEEE Transactions on Terahertz Science and Technology dedicated to the 28th IEEE International Symposium on Space Terahertz Technology (ISSTT2017

Glass Transition in a Two-Dimensional Electron System in Silicon in a Parallel Magnetic Field

Studies of low-frequency resistance noise show that the glassy freezing of the two-dimensional electron system (2DES) in Si in the vicinity of the metal-insulator transition (MIT) persists in parallel magnetic fields B of up to 9 T. At low B, both the glass transition density $n_g$ and $n_c$, the critical density for the MIT, increase with B such that the width of the metallic glass phase ($n_c<n_s<n_g$) increases with B. At higher B, where the 2DES is spin polarized, $n_c$ and $n_g$ no longer depend on B. Our results demonstrate that charge, as opposed to spin, degrees of freedom are responsible for glassy ordering of the 2DES near the MIT.Comment: 4 pages, 5 figure

Transport properties of an electron-hole bilayer/superconductor hybrid junction

We investigate the transport properties of a junction consisting of an electron-hole bilayer in contact with normal and superconducting leads. The electron-hole bilayer is considered as a semi-metal with two electronic bands. We assume that in the region between the contacts the system hosts an exciton condensate described by a BCS-like model with a gap $\Gamma$ in the quasiparticle density of states. We first discuss how the subgap electronic transport through the junction is mainly governed by the interplay between two kinds of reflection processes at the interfaces: The standard Andreev reflection at the interface between the superconductor and the exciton condensate, and a coherent crossed reflection at the semi-metal/exciton-condensate interface that converts electrons from one layer into the other. We show that the differential conductance of the junction shows a minimum at voltages of the order of $\Gamma/e$. Such a minimum can be seen as a direct hallmark of the existence of the gapped excitonic state

Metal-insulator transition and glassy behavior in two-dimensional electron systems

Studies of low-frequency resistance noise demonstrate that glassy freezing occurs in a two-dimensional electron system in silicon in the vicinity of the metal-insulator transition (MIT). The width of the metallic glass phase, which separates the 2D metal and the (glassy) insulator, depends strongly on disorder, becoming extremely small in high-mobility (low-disorder) samples. The glass transition is manifested by a sudden and dramatic slowing down of the electron dynamics, and by a very abrupt change to the sort of statistics characteristic of complicated multistate systems. In particular, the behavior of the second spectrum, an important fourth-order noise statistic, indicates the presence of long-range correlations between fluctuators in the glassy phase, consistent with the hierarchical picture of glassy dynamics.Comment: Contribution to conference on "Noise as a tool for studying materials" (SPIE), Santa Fe, New Mexico, June 2003; 15 pages, 12 figs. (includes some low-quality figs; send e-mail to get high-quality figs.

Scaling of nano-Schottky-diodes

A generally applicable model is presented to describe the potential barrier shape in ultra small Schottky diodes. It is shown that for diodes smaller than a characteristic length $l_c$ (associated with the semiconductor doping level) the conventional description no longer holds. For such small diodes the Schottky barrier thickness decreases with decreasing diode size. As a consequence, the resistance of the diode is strongly reduced, due to enhanced tunneling. Without the necessity of assuming a reduced (non-bulk) Schottky barrier height, this effect provides an explanation for several experimental observations of enhanced conduction in small Schottky diodes.Comment: 4 pages, 4 figures, accepted for publication in Appl. Phys. Lett., some minor additions and correction

Enhanced tunneling across nanometer-scale metal-semiconductor interfaces

We have measured electrical transport across epitaxial, nanometer-sized metal-semiconductor interfaces by contacting CoSi2-islands grown on Si(111) with an STM-tip. The conductance per unit area was found to increase with decreasing diode area. Indeed, the zero-bias conductance was found to be about 10^4 times larger than expected from downscaling a conventional diode. These observations are explained by a model, which predicts a narrower barrier for small diodes and therefore a greatly increased contribution of tunneling to the electrical transport.Comment: 3 pages, 2 EPS-figures; accepted for publication in Appl. Phys. Let

Dynamics of spin transport in voltage-biased Josephson junctions

We investigate spin transport in voltage-biased spin-active Josephson junctions. The interplay of spin filtering, spin mixing, and multiple Andreev reflection leads to nonlinear voltage dependence of the dc and ac spin current. We compute the voltage characteristics of the spin current (I_S) for superconductor-ferromagnet-superconductor (SFS) Josephson junctions. The sub-harmonic gap structure of I_S(V) is shown to be sensitive to the degree of spin mixing generated by the ferromagnetic interface, and exhibits a pronounced even-odd effect associated with spin transport during multiple Andreev reflection processes. For strong spin mixing both the magnitude and the direction of the dc spin current can be sensitively controlled by the bias voltage.Comment: 4 pages, 3 figure